Method of epitaxially growing device structures with submicron group III nitride layers utilizing HVPE

ABSTRACT

A method and apparatus for fabricating thin Group III nitride layers as well as Group III nitride layers that exhibit sharp layer-to-layer interfaces are provided. According to one aspect, an HVPE reactor includes one or more gas inlet tubes adjacent to the growth zone, thus allowing fine control of the delivery of reactive gases to the substrate surface. According to another aspect, an HVPE reactor includes both a growth zone and a growth interruption zone. According to another aspect, an HVPE reactor includes a slow growth rate gallium source, thus allowing thin layers to be grown. Using the slow growth rate gallium source in conjunction with a conventional gallium source allows a device structure to be fabricated during a single furnace run that includes both thick layers (i.e., utilizing the conventional gallium source) and thin layers (i.e., utilizing the slow growth rate gallium source).

CROSS-REFERENCES TO RELATED APPLICATIONS

This application claims priority from U.S. Patent Application Ser. Nos.60/280,604 filed Mar. 30, 2001 and No. 60/283,743, filed Apr. 13, 2001,the disclosures of which are incorporated herein by reference for allpurposes.

FIELD OF THE INVENTION

The present invention relates generally to semiconductor devices and,more particularly, to a method and apparatus for fabricating submicronlayers of Group nitride semiconductor materials.

BACKGROUND OF THE INVENTION

III-V compounds such as GaN, AlN, AlGaN, InGaN, InAlGaN, and InGaAlBNPAshave unique physical and electronic properties that make them idealcandidates for a variety of electronic and opto-electronic devices. Inparticular, these materials exhibit a direct band gap structure, highelectric field breakdown, and high thermal conductivity. Additionally,materials such as In_(x)Al_(1-x)GaN can be used to cover a wide range ofband gap energies, i.e., from 1.9 eV (where x equals 1) to 6.2 eV (wherex equals 0).

Until recently, the primary method used to grow Group III nitridesemiconductors was metal organic chemical vapor deposition (MOCVD)although other techniques such as molecular beam epitaxy (MBE) have alsobeen investigated. In the MOCVD technique, III-V compounds are grownfrom the vapor phase using metal organic gases as sources of the GroupIII metals. For example, typically trimethylaluminum (TMA) is used asthe aluminum source and trimethylgallium (TMG) is used as the galliumsource. Ammonia is usually used as the nitrogen source. In order tocontrol the electrical conductivity of the grown material, electricallyactive impurities are introduced into the reaction chamber duringmaterial growth. Undoped III-V compounds normally exhibit n-typeconductivity, the value of the n-type conductivity being controlled bythe introduction of a silicon impurity in the form of silane gas intothe reaction chamber during growth. In order to obtain p-type materialusing this technique, a magnesium impurity in the form ofbiscyclopentadienymagnesium is introduced into the reactor chamberduring the growth cycle. As Mg doped material grown by MOCVD is highlyresistive, a high temperature post-growth anneal in a nitrogenatmosphere is required in order to activate the p-type conductivity.

Although the MOCVD technique has proven adequate for a variety ofcommercial devices, the process has a number of limitations thatconstrain its usefulness. First, due to the complexity of the varioussources (e.g., trimethylaluminum, trimethylgallium, andbiscyclopentiadienylmagnesium), the process can be very expensive andone which requires relatively complex equipment. Second, the MOCVDtechnique does not provide for a growth rate of greater than a fewmicrons per hour, thus requiring long growth runs. The slow growth rateis especially problematic for device structures that require thicklayers such as high voltage rectifier diodes that often have a baseregion thickness of approximately 30 microns. Third, n-type AlGaN layersgrown by MOCVD are insulating if the concentration of AlN is high (>50mol. %). Accordingly, the concentration of AlN in the III-V compoundlayers forming the p-n junction is limited. Fourth, in order to grow ahigh-quality III-V compound material on a substrate, the MOCVD techniquetypically requires the growth of a low temperature buffer layerin-between the substrate and III-v compound layer. Fifth, generally inorder to obtain p-type III-V material using MOCVD techniques, apost-growth annealing step is required.

Hydride vapor phase epitaxy or HVPE is another technique that has beeninvestigated for use in the fabrication of III-V compound materials.This technique offers advantages in growth rate, simplicity and cost aswell as the ability to grow a III-V compound layer directly onto asubstrate without the inclusion of a low temperature buffer layer. Inthis technique III-V compounds are epitaxially grown on heatedsubstrates. The metals comprising the III-V layers are transported asgaseous metal halides to the reaction zone of the HVPE reactor.Accordingly, gallium and aluminum metals are used as source materials.Due to the high growth rates associated with this technique (i.e., up to100 microns per hour), thick III-V compound layers can be grown.

The HVPE method is convenient for mass production of semiconductordevices due to its low cost, flexibility of growth conditions, and goodreproducibility. Recently, significant progress has been achieved inHVPE growth of III-V compound semiconductor materials. AlGaN, GaN andAlN layers have been grown as well as a variety of structures using thistechnique. Since this technique does not require low temperature bufferlayers, a variety of novel device structures have been fabricated, suchas diodes with n-GaN/p-SiC heterojunctions. Furthermore, p-type layershave recently been produced using HVPE, thus allowing p-n or p-i-njunction devices to be fabricated.

In order to fully utilize HVPE in the development and fabrication ofIII-V compound semiconductor devices, thin layers must be produced, onthe order of a micron or less. Conventional HVPE techniques have beenunable, however, to grow such layers. As a result, the potential of theHVPE technique for fabricating devices based on Group III semiconductorshas been limited.

Accordingly, what is needed in the art is a method and apparatus forgrowing submicron Group III nitride compounds using HVPE techniques. Thepresent invention provides such a method and apparatus.

SUMMARY OF THE INVENTION

The present invention provides a method and apparatus for fabricatingthin Group III nitride layers as well as Group III nitride layers thatexhibit sharp layer-to-layer interfaces.

According to one aspect of the invention, a method and apparatus forfabricating multi-layer Group III nitride semiconductor devices in asingle reactor run utilizing HVPE techniques is provided. Preferably anatmospheric, hot-walled horizontal furnace is used. Sources (Group IIImetals, Group V materials, acceptor impurities, donor impurities) arelocated within the multiple source zones of the furnace, the sourcesused being dependent upon the desired compositions of the individuallayers. Preferably HCl is used to form the necessary halide metalcompounds and an inert gas such as argon is used to transport the halidemetal compounds to the growth zone where they react with ammonia gas. Asa result of the reaction, epitaxial growth of the desired compositionoccurs. By controlling the inclusion of one or more acceptor impuritymetals, the conductivity of each layer can be controlled.

In at least one embodiment of the invention, the reactor includes one ormore gas inlet tubes adjacent to the growth zone. By directing the flowof gas (e.g., an inert gas) generally in the direction of thesubstrates, epitaxial growth can be disrupted. The flow of gas can bedirected at the substrate or in a direction that simply disrupts theflow of reactive gases such that epitaxial growth is halted.

In at least one embodiment of the invention, the reactor includes both agrowth zone and a growth interruption zone. One or more gas inlet tubesdirect a flow of gas (e.g., an inert gas) towards the growthinterruption zone, thereby substantially preventing any reactive gasesfrom entering into this zone. In use, after the growth of a layer iscompleted, the substrate is transferred from the growth zone to thegrowth interruption zone. The temperature of the substrate is maintainedduring the transfer and while the substrate is within the growthinterruption zone, thus preventing thermal shock. While the substrate iswithin the growth interruption zone, the growth zone is purged and thesources required for the next desired layer are delivered to the growthzone. Once the reaction stabilizes, the substrate is returned to thegrowth zone. This process continues until all of the required devicelayers have been grown.

In at least one embodiment of the invention, the reactor uses a slowgrowth rate gallium source. The slow growth rate gallium source has areduced gallium surface area. By reducing the surface area, there isless gallium available to react with the halide reactive gas. As aresult, less gallium chloride is produced and fine control of the amountof gallium chloride delivered to the growth zone is possible.

In at least one embodiment of the invention, the reactor includes both aconventional gallium source and a slow growth rate gallium source. Theslow growth rate gallium source dramatically reduces the surface area ofthe gallium exposed to the halide reactive gas, resulting in theproduction of less gallium chloride. Due to the low production levels,finer control of the amount of gallium chloride delivered to the growthzone is possible in contrast to the conventional source. Accordingly, adevice can be fabricated during a single furnace run that includes boththick layers (i.e., utilizing the conventional gallium source) and thinlayers (i.e., utilizing the slow growth rate gallium source).

In at least one embodiment of the invention, the reactor includes aconventional gallium source, a slow growth rate gallium source, one ormore growth zones, and at least one growth disruption zone. Theconventional gallium source is used in the fabrication of thick layers;the slow growth rate gallium source is used in the fabrication of thinlayers; and the growth disruption zone is used to achieve fine controlover layer composition and layer interfaces. The growth interruptionzone uses one or more gas inlet tubes to direct a flow of gas towardsthe growth interruption zone, thereby substantially preventing anyreactive gases from entering into the zone.

A further understanding of the nature and advantages of the presentinvention may be realized by reference to the remaining portions of thespecification and the drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic illustration of an atmospheric, hot-walledhorizontal furnace as used with a preferred embodiment of the invention;

FIG. 2 is a top view of another preferred embodiment of the inventionutilizing multiple growth zones as well as a growth interruption zone;

FIG. 3 illustrates one gas inlet configuration used to disrupt theepitaxial growth process;

FIG. 4 illustrates an alternate gas inlet configuration used to disruptthe epitaxial growth process;

FIG. 5 illustrates another preferred embodiment of the growth disruptionzone;

FIG. 6 illustrates an exemplary structure fabricated in accordance withthe invention;

FIG. 7 illustrates an exemplary methodology as used to fabricate thestructure shown in FIG. 6;

FIG. 8 is an illustration of a low growth rate Ga source; and

FIG. 9 is an illustration of an alternate low growth rate Ga source.

DESCRIPTION OF THE SPECIFIC EMBODIMENTS

The present invention provides a method and apparatus for producingsubmicron layers of III-V compounds utilizing HVPE techniques. As aresult of the ability to fabricate such layers, the present inventionallows a variety of device structures to be realized as well.

Processes

FIG. 1 is a schematic illustration of an atmospheric, hot-walledhorizontal furnace 100 as used with the preferred embodiment of theinvention. It should be understood that the invention is not limited tothis particular furnace configuration as other furnace configurations(e.g., vertical furnaces) that offer the required control over thetemperature, temperature zones, gas flow, source location, substratelocation, etc., can also be used. Furnace 100 is comprised of multipletemperature zones, preferably obtained by using multiple resistiveheaters 101, each of which at least partially surrounds furnace tube103. It is understood that although reactor tube 103 preferably has acylindrical cross-section, other configurations can be used such as a‘tube’ with a rectangular cross-section. Within reactor tube 103 are oneor more source tubes. As noted with respect to reactor tube 103,although the source tubes preferably have a cylindrical cross-section,the invention is not limited to cylindrical source tubes. Additionally,although source tubes are used in the preferred embodiment of theinvention, other means of separating the sources can be used, such asfurnace partitions.

In the preferred embodiment shown in FIG. 1, five source tubes 107-111are used, thus allowing the use of a metallic gallium (Ga) source 113,an aluminum (Al) source 114, an indium (In) source 115, a boron (B)source 116, and a magnesium (Mg) source 117. It is understood that bothfewer and greater numbers of source tubes can be used, as well asdifferent sources, depending upon the layers and structures that are tobe fabricated.

Preferably within each source tube is a source boat 119. As used herein,the term “boat” simply refers to a means of holding the source material.Therefore boat 119 may simply be a portion of a tube with an outerdiameter that is slightly smaller than the inner diameter of thecorresponding source tube. Alternately, boat 119 may be comprised of aportion of a tube with a pair of end portions. Alternately, boat 119 maybe comprised of a plate of suitable material that fits within thecorresponding source tube. Alternately, source material can be heldwithin a source tube without the use of a separate boat. Additionally,alternate boat configurations are known by those of skill in the art andclearly envisioned by the inventors.

Preferably each boat 119 is coupled, either permanently or temporarily,to a corresponding control rod 121. Control rods 121 determine theposition of each boat 119 within furnace 103, and thus the temperatureof the source in question. Control rods 121 may be manually manipulated,as provided for in the illustrated configuration, or coupled to arobotic positioning system.

In the preferred embodiment of the invention, one or more source tubes123-124 are used to introduce gases and/or impurities used during thegrowth process to achieve the desired composition for a specific layer.

One or more substrates 125 are located within the growth zone of reactor103, the substrates preferably resting on a pedestal 127. Althoughtypically multiple substrates 125 are loaded into the reactor forco-processing, a single substrate can be processed with the invention.Substrates 125 may be comprised of sapphire (Al₂O₃), silicon carbide(SiC), silicon (Si), gallium nitride (GaN), or any other suitable singlecrystal material. Substrates 125 can be produced by any conventionaltechnique. Preferably substrates 125 can be remotely positioned, as wellas repositioned during the growth of a structure, thus allowing thegrowth rate to be varied. Additionally, the temperature of a particularregion of the growth zone can be varied by altering the amount of heatapplied by heaters 101 that are proximate to the growth zone region inquestion.

In addition to the previously noted source tubes, including gas sourcetubes 123-124, in the preferred embodiment of the invention at leastone, and preferably more, additional gas inlet tubes 129-130 are locatedsuch that the gas flow passing through these tubes can be used to offsetthe flow of gas passing through source tubes 107-111 and 123-124. Asnoted in more detail below, gas inlet tubes 129 and 130 are used todirect gas flow either directly onto the growing surface of substrates125 or otherwise alter the flow of gas from the source tubes onto thegrowth surface. As a result, it is possible to decrease the growth rateof a specific Group III layer in a controllable manner, even to theextent of completely stopping epitaxial growth.

In a preferred embodiment of the invention, one or more gas inlet tubes(e.g., tube 129) are used to pass an inert gas (e.g., Ar) into thereactor while one or more inlet tubes (e.g., tube 130) are used to passa halide gas (e.g., HCl) into the reactor. Preferably the reactorincludes inlet tubes for both an inert gas and a halide gas, thusproviding additional flexibility during the growth process although itis understood that a reactor in accordance with the invention does notrequire the ability to pass both an inert gas and a halide gas throughgas inlet tubes 129-130, either simultaneously or serially, into thereactor in order to control the growth rate.

In addition to controlling the flow of gas into the growth zone, theinventors have found that it is also advantageous to provide a means ofmoving the substrate within the reactor between various regions of thegrowth zone or between the growth zone and a region outside of thegrowth zone (i.e., a growth interruption zone). Preferably substrateholder 127 is coupled to a robotic arm 131, thus allowing remote, rapid,and accurate repositioning of the substrates. Robotic systems are wellknown and will therefore not be described in further detail herein. Inan alternate embodiment of the invention, arm 131 is manuallycontrolled.

FIG. 2 is a top view of another preferred embodiment of the invention.This embodiment, utilizing both back flow gas sources and substratemovement within the growth zone, allows the achievement of both lowgrowth rates and sharp layer to layer interfaces. As illustrated,reactor 200 includes two distinct growth regions 201 and 203 as well asa growth interruption zone 205 which can be used to further controllayer interface sharpness. However, as described further below, theinvention does not require multiple growth zones to achieve low growthrates or sharp layer interfaces.

Substrates 207 are positioned on a pedestal 209 coupled to arm 211. Arm211, preferably coupled to a robotic control system, is used to move thesubstrates between growth zone regions 201 and 203 (shown in phantom) aswell as growth interruption zone 205. In at least one preferredembodiment, means are included to move the substrates along an axisperpendicular to arm 211, thus allowing the growth rate of a particularlayer to be further optimized. Preferably pedestal 209 is coupled to arm211 with an x-y positioner 213, as are known to those of skill in theart.

Adjacent to growth region 201 are source tubes 215-218. Adjacent togrowth region 203 are source tubes 219-221. It is anticipated thatadditional growth zones, and corresponding source tubes, may be desiredfor certain applications. Additionally, it should be understood thatboth fewer and greater numbers of source tubes than those illustrated inFIG. 2 may be required, dependent upon the composition of the desiredstructure layers. The required sources (e.g., Ga, Al, In, etc.) for aspecific growth zone depend upon the desired composition to be grown inthe zone in question. Due to the need for the same source material inmultiple layers (e.g., GaN and AlGaN), it will be appreciated that thesame source material (e.g., Ga) may be utilized in more than one sourcetube, the source tubes located adjacent to different growth zones.

Adjacent to growth zone 201 are one or more gas inlet tubes 223 andadjacent to growth zone 203 are one or more gas inlet tubes 224.Depending upon the degree or type of desired gas flow disruption, gasinlet tubes are positioned to direct their flow directly at thesubstrate's surface (e.g., FIG. 3) or simply counter to the gas flowfrom the source tubes (e.g., FIG. 4). In FIGS. 3 and 4, epitaxial growthon substrate 301 is due to the reaction of halide metal compounds and areaction gas (e.g., ammonia) flowing in a direction 303. In order toslow the growth rate in growth zone 305 of the epitaxial layer inquestion, an inert or other gas from a gas inlet tube 223 is eitherdirected at the substrate along a flow direction 307, or in a direction401 that is counter to the direction of source flow.

In addition to the gas inlet tubes discussed above, one or more gasinlet tubes 225 are preferably positioned adjacent to growthinterruption zone 205. When substrates 207 are located in zone 205,inert or other gas from gas inlet tube 225 aids in the immediatecessation of epitaxial growth, thus allowing improved, sharp layerinterfaces to be achieved.

It is understood that the HVPE reactor and processing improvementsdescribed above can be used during the growth of any HVPE epitaxiallayer, thus allowing growth rate control for any layer.

Although the general techniques for HVPE processing are known to thoseof skill in the art, examples of the HVPE process as well as exemplarystructures are provided below. As previously noted, HVPE in general, andthe reactor design and process of the current invention in particular,are applicable to many different compositions. Accordingly, it should beunderstood that the examples provided below are only intended toillustrate HVPE and the disclosed method of obtaining low growth rates,and that different layer compositions and conductivities can be obtainedwithout departing from the invention.

Referring to FIG. 2, boats 227 and 229 contain Ga metal sources, eachsource providing material for a different growth zone. Similarly, boats231 and 233 each contain an acceptor impurity metal such as magnesium(Mg) for use in growth zones 201 and 203, respectively. Boat 235contains an Al source. Source tubes 215, 217 and 219 are each coupled toa supply 237 of a halide reactive gas, preferably HCl. A source of aninert gas such as argon (Ar) 239 is coupled to source tubes 215-217, 219and 220 while an ammonia gas source 241 is directed at the growth zonesvia source tubes 218 and 221. One gas inlet tube 223 for growth zone201, one gas inlet tube 224 for growth zone 203 and gas inlet tube 225for the growth interruption zone are each coupled to an inert gas, inthis example Ar source 239, while the remaining gas inlet tubes 223/224for growth zones 201/203 are coupled to HCl source 237.

Initially reactor 200 is filled with Ar gas, the flow of Ar gaspreferably being in the range of 1 to 25 liters per minute. Substrates207 are placed in the desired growth zone (e.g., 201) and heated to thepreferred growth temperature, preferably in the range of 800° to 1300°C., and more preferably to a temperature of between 1000° and 1300° C.,and still more preferably to a temperature of between 1000° and 1100° C.Preferably prior to initiating growth, substrates 207 are etched toremove residual surface contamination, for example using gaseous HClfrom supply 237. The Ga source material within boat 227 is heated to atemperature of 650° to 1050° C., and more preferably to a temperature ofbetween 650° and 850° C., after which gaseous HCl from source 237 isintroduced into source tube 215. As a result of the reaction between theHCl and the Ga, gallium chloride is formed. The gallium chloride isdelivered to growth zone 201 by the flow of Ar gas through source tube215. Simultaneously, ammonia gas from source 241 is delivered to growthzone 201. The reaction between the gallium chloride and the ammoniacauses the epitaxial growth of n-type GaN. The growth rate of the GaNcan be controlled by the flow rate of HCl through source tube 215 aswell as by the flow rate of HCl and/or Ar through gas inlet tubes 223coupled to the HCl and Ar sources, allowing growth rates of 10's ofmicrons per minute to less than 0.05 microns per minute. Aftercompletion of the desired layer thickness, and assuming no additionallayers are required, the flow of HCl through source tube 215 and ammoniagas through source tube 218 is stopped and substrates 207 are cooled inthe flowing Ar gas. In order to obtain a sharp layer interface,preferably HCl and/or Ar continue to flow through gas inlet tubes 223.More preferably, substrates 207 are immediately moved to adjacent zone205 while gas through gas inlet tube 225 continues to cool thesubstrates.

Although not illustrated, the ratio of donors to acceptors can befurther controlled by adding donor impurities to the material as then-type layer is being grown. Suitable donor materials include, but arenot limited to, oxygen (O), silicon (Si), germanium (Ge), and tin (Sn).

In the above example, if a p-type GaN is desired, an appropriateacceptor impurity metal is introduced into growth zone 201 during theepitaxial growth of the desired layer. In the present example, Mglocated in boat 231 is used as the acceptor impurity metal, although itis clearly envisioned that other impurity metals can be used (e.g., Mg,Zn, MgZn, etc.).

As shown in FIG. 2, source tube 216 is coupled to Ar gas supply 239. TheMg impurity metal is simultaneously heated with the Ga source to atemperature in the range of 250° to 1050° C. For a Mg impurity metal asshown, preferably the temperature of the source is within the range of450° to 700° C., more preferably within the range of 550° to 650° C.,and still more preferably to a temperature of approximately 615° C.Prior to initiating growth, preferably the acceptor impurity metal isetched, for example using HCl gas, thereby insuring minimal sourcecontamination. During growth, Ar gas is passed through source tube 216at a relatively high flow rate, preferably between 1000 and 4000standard cubic centimeters per minute, and more preferably between 2000and 3500 standard cubic centimeters per minute. Due to the flow of Argas, atoms of the acceptor impurity metal are delivered to the growthzone and incorporated into the epitaxially growing GaN material. Forp-type GaN material, an annealing step can be used to further improvethe properties of this layer, specifically lowering the resistivity ofthe p-type layer. Preferably the annealing step is performed immediatelyafter the growth of the p-type layer is completed. In the preferredembodiment, the material is annealed for approximately 10 minutes innitrogen at a temperature within the range of 700° to 800° C. Theannealing step helps to drive the hydrogen out of the layer. It isunderstood that other annealing temperatures and times can used, forexample, annealing at a lower temperature for an extended period oftime. It is also understood, as previously described, that the annealingstep is not required to achieve p-type III-V material according to theinvention.

In addition to n-type and p-type III-V compound layers, it is understoodthat insulating (i-type) III-V layers can also be grown using thepresent invention. The process is similar to that described above,except that during growth of the III-V material, fewer atoms of theacceptor impurity metal are delivered to the growth zone, therebyleading to a lower doping level. If required, donor impurities can bedelivered to the growth zone as well.

As previously noted, although the above example illustrated the HVPEgrowth process for GaN of various conductivities, other Group IIInitride layers can be grown. For example, utilizing the Al source withinboat 235, AlGaN layers of the desired conductivity (p-, n-, or i-type)can be grown within growth zone 201. The process used to grow AlGaNlayers is quite similar to the GaN process previously described. In thisinstance, in addition to heating the Ga source, the Al source is heatedas well, typically to a temperature within the range of 700° to 850° C.To grow an AlGaN layer, HCl gas 237 is introduced into Ga source tube215 and Al source tube 217, resulting in the formation of galliumchloride and aluminum trichloride which is delivered to the growth zoneby the flow of Ar gas 239. The reaction of ammonia gas 241 introducedinto the growth zone simultaneously with the source materials results inthe growth of AlGaN. Depending upon the concentration, if any, ofacceptor impurities, the AlGaN layer may be n-, i-, or p-type.

It will be understood that the descriptions provided above with respectto the growth of specific composition layers is meant to beillustrative, and not limited, of the invention. For example, othersources can be used such as boron (B), indium (In), arsenic (As) andphosphorous (P). These sources, in combination with the previously notedsources, allow the growth of GaN, AlGaN, AlN, InGaN, InGaAlN,InGaAlBNPAs, etc.

The above examples only utilized growth region 201 of reactor 200. It isunderstood that the substrates can be moved back and forth between thegrowth regions of a single reactor (for example, utilizing both growthregions 201 and 203 of reactor 200) and that a reactor can have anynumber of growth zones ranging from one to two or more. Eitherdisrupting the flow of reactive gases at a growth zone, or moving thesubstrates to a growth interruption zone can achieve sharp interfacesand fine thickness control. Additionally, as described in further detailbelow, both conventional and slow growth rate sources can be used,either with a single growth zone or in distinct growth zones.

FIG. 5 illustrates another preferred embodiment of the invention. Inthis embodiment, reactor 500 includes a single growth zone 501, thusminimizing the number of source tubes 503 required. Adjacent to growthzone 501 is a growth interruption zone 505. Zones 501 and 505 can bemaintained at the same temperature, thus allowing a substrate to bemoved between the zones without inducing thermal shock. The temperatureof zones 501 and 505 can also vary slightly as long as the variation isminimal. Preferably the temperatures are within 50° C. of one another,more preferably within 25° C. of one another, still more preferablywithin 10° C. of one another, still more preferably within 5° C. of oneanother, and still more preferably within 1° C. of one another.

One or more gas inlet tubes are used to direct gas flow onto a substratewhen it is within zone 505, either directing the flow of gas over thesubstrate (e.g., gas inlet tube 507), or directing the flow of gasdirectly at the substrate (e.g., gas inlet tube 509). Although the gasdirected at or over the substrates can be selected from a variety ofgases, preferably the selected gas is an inert gas, and more preferablyAr. As in the prior examples, in order to epitaxially grow a Group IIInitride, source tubes 503 are loaded with the appropriate sources (e.g.,Ga, Al, Mg) and coupled to appropriate halide (e.g., HCl) and inert(e.g., Ar) delivery gases. Control of the reaction within the growthzone allows the desired material to be grown.

Although it will be understood that the embodiment illustrated in FIG. 5can be used to expitaxially grow any Group III nitride compound of thedesired thickness, for purposes of illustration the growth of aGaN/AlGaN/GaN/AlGaN structure as shown in FIG. 6 is described below.This structure illustrates the ability to achieve very low growth rates,and thus thin layers, as well as the ability to achieve very sharp layerto layer interfaces. This process also demonstrates the ability to growa multi-layer structure without withdrawing the substrates from thereactor or going through a cool-down cycle.

As in a typical HVPE process, initially reactor 500 is filled with aninert gas (e.g., Ar) (step 701) and the substrate is moved into growthzone 501 (step 703). The substrate can be any of a variety of singlecrystal materials, including SiC, Si, or GaN, although in this examplesubstrate 601 is comprised of sapphire. The substrate is then heated(step 705) and the substrate and the source surfaces are cleaned, asnecessary, typically by an HCl etch (step 707). Gallium chloride andammonia are delivered to the growth zone (step 709) where they react toform GaN layer 603 (step 711).

In this example after a relatively thick layer of GaN is grown, on theorder of 10 microns, the substrate is moved into the growth interruptionzone 505 (step 713). Zone 505 is at the same temperature as growth zone501, thus preventing thermal shock to the structure as the substrate istransferred between zones. Preferably inert gas (e.g., Ar) is directedat the substrate within zone 505, thus insuring that growth of GaN isstopped (step 715). The inert gas can be directed at the substrate,above the substrate, with a flow direction that is opposite the flow ofgas from the sources, with a flow direction that is perpendicular to theflow of gas from the sources, or utilizing some other flow direction.

After growth zone 501 has been sufficiently purged with an inert gas(e.g., Ar) (step 717), typically requiring on the order of 5 minutes,gallium chloride, aluminum trichloride and ammonia gas are delivered tothe growth zone to achieve the desired layer composition (step 719).Preferably the gas delivery system and the gas reaction is allowed tostabilize (step 721) for a period of time, typically on the order of 3minutes. The substrate is then moved back into growth zone 501 (step723) and AlGaN layer 605 is grown (step 725). To achieve a thin AlGaNlayer, the substrate is kept in the growth zone for a very short periodof time, typically between 1 and 30 seconds. In the present example, toachieve a 0.03 micron thick layer, growth was only allowed for 5seconds.

After the desired AlGaN layer has been grown, the substrate is againmoved into the growth interruption zone 505 (step 727) where inert gasbackflow insures the interruption of growth. Zone 501 is purged with Argas (step 729) and then gallium chloride and ammonia gas arereintroduced into the growth zone in a manner suitable for low growth(step 731). Once the growth reaction has stabilized (step 733),typically requiring on the order of 5 minutes, the substrate is movedback into growth zone 501 (step 735) and GaN layer 607 is grown (step737). In the present example, to achieve a 0.005 micron thick layer,growth was only allowed for 10 seconds and the slow growth rate Gasource described in detail below was used. Due to the use of growthinterruption zone 505 and the purging/stabilizing process describedabove, layer 607 does not include any trace of aluminum.

Once layer 607 is complete, the substrate is again moved into the growthinterruption zone 505 (step 739) where inert gas backflow insures theinterruption of growth. Zone 501 is purged with Ar gas (step 741) andthen aluminum trichloride, gallium chloride and ammonia gas arereintroduced into the growth zone in a manner suitable for low growth(step 743). Once the growth reaction has stabilized (step 745), thesubstrate is moved back into growth zone 501 (step 747) and AlGaN layer609 is grown (step 749). In the present example, a 0.02 micron thicklayer was grown. After completion of the final layer, the substrate iscooled in flowing inert gas (step 751).

In order to achieve the desired sharp layer interfaces, the inventorshave found that after removal of the substrate from the growth zone tothe growth interruption zone, between 3 and 10 minutes is required forpurging the growth zone and achieving a stable reaction for the nextlayer.

It will be appreciated that the above example, in terms of the number oflayers (i.e., device complexity), the composition of the layers, theconductivity of the layers, and the thickness of the layers, is onlymeant to be illustrative of a preferred embodiment of the presentinvention.

In some instances extremely thin (e.g., less than 0.05 microns) GroupIII nitride layers are required. In other instances, maintaining thedesired layer thickness is critical. The inventors have found that inthese instances a modified Ga source is required.

A conventional HVPE Ga source is typically located in a quartz boat suchthat there is a relatively large volume of Ga melt and thus a largesurface area exposed to the reactive gas (e.g., HCl). Such a Ga meltgenerally has an exposed surface area of several square centimeters.Controlling the flow of the reactive gas varies the growth rateassociated with such a source. However if the gas flow is too low, thegrowth rate becomes unstable leading to non-reproducible layers (andthus structures). Accordingly, reproducible layers typically require agrowth rate of 10 microns per hour or higher.

According to a preferred embodiment of the invention, a slow growth rateGa source 800 is used in order to controllably grow thin (e.g., lessthan 0.05 microns) layers of GaN, AlGaN, InGaN, InGaAlN, InGaAlBNPAs,etc. As Ga source 800 is not suitable for growth rates in excess of 0.1microns per hour, preferably Ga source 800 is used in conjunction with aconventional Ga source within the reactor, thus allowing the growth ofstructures utilizing both thin and thick layers. Ga source 800 and theconventional Ga source can be used with a single growth zone or indistinct growth zones.

As illustrated in FIG. 8, Ga source 800 is comprised of Ga sourcematerial 801 confined within a quartz channel 803. Quartz channel 803 isheld within a standard quartz source tube 805. As with a conventional Gasource, source tube 805 is coupled to a reactive halide gas (e.g., HClgas source 807) and an inert delivery gas (e.g., Ar gas source 809). Itis understood that source tube 805 is located within the reactor in asimilar manner to a conventional source tube (e.g., Ga source tube 107in reactor 100, Ga source tubes 215 and 219 in reactor 200, Ga sourcetube 503 in reactor 500). In the preferred embodiment of source 800, anend portion 811 is turned up such that the open portion of quartzchannel 803 is on the top surface. As a result, only a small portion 813of the Ga source is allowed to react with the halide gas thus achievinga growth rate of less than 1 micron per hour, and preferably less than0.1 microns per hour. Preferably the exposed portion of the Ga sourcehas an open surface area of less than 4 square millimeters, morepreferably less than 2 square millimeters, and still more preferablyless than 1 square millimeter. If necessary, Ar gas can be used to applypressure to the back surface 815 of the Ga source, thus insuring thatthe Ga continues to fill aperture 813 of channel 803.

FIG. 9 illustrates an alternate embodiment of a suitable low growth ratesource. As shown, a quartz channel 901 includes a large reservoir region903, a necked down region 905, and an aperture 907 on the top surfacethat allows the exposure of only a small portion of the Ga source.

As will be understood by those familiar with the art, the presentinvention may be embodied in other specific forms without departing fromthe spirit or essential characteristics thereof. Accordingly, thedisclosures and descriptions herein are intended to be illustrative, butnot limiting, of the scope of the invention which is set forth in thefollowing claims.

What is claimed is:
 1. A method of epitaxially growing a Group IIInitride semiconductor device in a single epitaxial growth run, themethod utilizing HVPE techniques and comprising the steps of: locating afirst gallium (Ga) source in a source boat within a first source zone ofan HVPE reactor, said first Ga source having a first exposed surfacearea; locating a second Ga source in a quartz channel within a secondsource zone of said HVPE reactor, said Ga source having a second exposedsurface area, wherein said second exposed surface area is less than saidfirst exposed area; locating a substrate within a growth zone of saidHVPE reactor, wherein said growth zone is maintained at a firsttemperature; heating said first Ga source to a second temperature;heating said second Ga source to a third temperature; introducing ahalide reaction gas into said first source zone to form a first galliumchloride compound; transporting said first gallium chloride compound tosaid growth zone; transporting a reaction gas to said growth zone, saidreaction gas containing nitrogen (N); reacting said first galliumchloride compound with said reaction gas to achieve a first epitaxialgrowth rate of greater than 0.1 microns per hour; growing a first GroupIII nitride layer to a thickness of greater than 5 microns; transferringsaid substrate to a growth interruption zone maintained at a fourthtemperature, wherein said fourth temperature is within 50° C. of saidfirst temperature; directing an inert gas in a flow direction thatsubstantially prevents said first gallium chloride compound and saidreaction gas from entering said growth interruption zone; purging saidgrowth zone; introducing said halide reaction gas into said secondsource zone to form a second gallium chloride compound; transportingsaid second gallium chloride compound to said growth zone; reacting saidsecond gallium chloride compound with said reaction gas to achieve asecond epitaxial growth rate of less than 0.1 microns per hour; andgrowing a second Group III nitride layer to a thickness of less than0.02 microns.
 2. The method of claim 1, further comprising the step ofdiscontinuing said step of transporting said first gallium chloridecompound to said growth zone, said discontinuing step performed aftersaid step of transferring said substrate to said growth interruptionzone.
 3. The method of claim 1, further comprising the step ofdiscontinuing said step of transporting said first gallium chloridecompound to said growth zone, said discontinuing step performed prior tosaid step of transferring said substrate to said growth interruptionzone.
 4. The method of claim 1, further comprising the steps of:discontinuing said steps of transporting said first gallium chloridecompound and said reaction gas to said growth zone, said discontinuingstep performed after said step of transferring said substrate to saidgrowth interruption zone; and transporting said reaction gas to saidgrowth zone prior to said step of reacting said second gallium chloridecompound with said reaction gas.
 5. The method of claim 1, furthercomprising the steps of: discontinuing said steps of transporting saidfirst gallium chloride compound and said reaction gas to said growthzone, said discontinuing step performed prior to said step oftransferring said substrate to said growth interruption zone; andtransporting said reaction gas to said growth zone prior to said step ofreacting said second gallium chloride compound with said reaction gas.6. The method of claim 1, further comprising the steps of: locating saidsubstrate within said growth interruption zone prior to said steps oftransporting said first gallium chloride compound and said reaction gasto said growth zone; stabilizing the reaction between said reaction gasand said first gallium chloride compound; and transferring saidsubstrate from said growth interruption zone to said growth zone aftercompletion of said stabilizing step.
 7. The method of claim 6, whereinsaid stabilizing step is performed for at least three minutes.
 8. Themethod of claim 1, further comprising the step of maintaining said thirdtemperature to within 25° C. of said first temperature.
 9. The method ofclaim 1, further comprising the step of maintaining said thirdtemperature to within 10° C. of said first temperature.
 10. The methodof claim 1, further comprising the step of maintaining said thirdtemperature to within 5° C. of said first temperature.
 11. The method ofclaim 1, further comprising the step of maintaining said thirdtemperature to within 1° C. of said first temperature.
 12. The method ofclaim 1, wherein said flow direction of said inert gas directing step issubstantially orthogonal to a source flow direction.
 13. The method ofclaim 1, wherein said flow direction of said inert gas directing step issubstantially opposite to a source flow direction.
 14. The method ofclaim 1, wherein said flow direction of said inert gas directing step isangled at a growth surface of said substrate.
 15. The method of claim 1,further comprising the steps of: locating a first supplemental Group IIImetal in a third source zone of said HVPE reactor; heating said firstsupplemental Group III metal to a fifth temperature; introducing saidhalide reaction gas into said third source zone to form a firstsupplemental Group III metal halide compound; and transporting saidfirst supplemental Group III metal halide compound to said growth zone,wherein said first Group III nitride layer is comprised of said Ga, saidfirst supplemental III metal and nitrogen, and wherein said first GroupIII nitride layer is formed by said reaction gas reacting with saidgallium chloride compound and said first supplemental Group III metalhalide compound.
 16. The method of claim 15, wherein said firstsupplemental Group III metal is selected from the group consisting ofaluminum (Al), indium (In) and boron (B).
 17. The method of claim 15,further comprising the steps of: locating a second supplemental GroupIII metal in a fourth source zone of said HVPE reactor; heating saidsecond supplemental Group III metal to a sixth temperature; introducingsaid halide reaction gas into said fourth source zone to form a secondsupplemental Group III metal halide compound; and transporting saidsecond supplemental Group III metal halide compound to said growth zone,wherein said first Group III nitride layer is comprised of said Ga, saidfirst supplemental Group III metal, said second supplemental Group IIImetal and nitrogen, and wherein said first Group III nitride layer isformed by said reaction gas reacting with said gallium chloridecompound, said first supplemental Group III metal halide compound andsaid second supplemental Group III metal halide compound.
 18. The methodof claim 17, wherein said second supplemental Group III metal isselected from the group consisting of aluminum (Al), indium (In) andboron (B).
 19. The method of claim 17, further comprising the steps of:locating a third supplemental Group III metal in a fifth source zone ofsaid HVPE reactor; heating said third supplemental Group III metal to aseventh temperature; introducing said halide reaction gas into saidfifth source zone to form a third supplemental Group III metal halidecompound; and transporting said third supplemental Group III metalhalide compound to said growth zone, wherein said first Group IIInitride layer is comprised of said Ga, said first supplemental Group IIImetal, said second supplemental Group III metal, said third supplementalGroup III metal and nitrogen, and wherein said first Group III nitridelayer is formed by said reaction gas reacting with said gallium chloridecompound, said first supplemental Group III metal halide compound, saidsecond supplemental Group III metal halide compound and said thirdsupplemental Group III metal halide compound.
 20. The method of claim19, wherein said third supplemental Group III metal is selected from thegroup consisting of aluminum (Al), indium (In) and boron (B).
 21. Themethod of claim 1, further comprising the steps of: locating a firstsupplemental Group III metal in a third source zone of said HVPEreactor; heating said first supplemental Group III metal to a fifthtemperature; introducing said halide reaction gas into said third sourcezone to form a first supplemental Group III metal halide compound; andtransporting said first supplemental Group III metal halide compound tosaid growth zone, wherein said second Group III nitride layer iscomprised of said Ga, said first supplemental III metal and nitrogen,and wherein said second Group III nitride layer is formed by saidreaction gas reacting with said gallium chloride compound and said firstsupplemental Group III metal halide compound.
 22. The method of claim21, wherein said first supplemental Group III metal is selected from thegroup consisting of aluminum (Al), indium (In) and boron (B).
 23. Themethod of claim 21, further comprising the steps of: locating a secondsupplemental Group III metal in a fourth source zone of said HVPEreactor; heating said second supplemental Group III metal to a sixthtemperature; introducing said halide reaction gas into said fourthsource zone to form a second supplemental Group III metal halidecompound; and transporting said second supplemental Group III metalhalide compound to said growth zone, wherein said second Group IIInitride layer is comprised of said Ga, said first supplemental Group IIImetal, said second supplemental Group III metal and nitrogen, andwherein said second Group III nitride layer is formed by said reactiongas reacting with said gallium chloride compound, said firstsupplemental Group III metal halide compound and said secondsupplemental Group III metal halide compound.
 24. The method of claim23, wherein said second supplemental Group III metal is selected fromthe group consisting of aluminum (Al), indium (In) and boron (B). 25.The method of claim 21, further comprising the steps of: locating athird supplemental Group III metal in a fifth source zone of said HVPEreactor; heating said third supplemental Group III metal to a seventhtemperature; introducing said halide reaction gas into said fifth sourcezone to form a third supplemental Group III metal halide compound; andtransporting said third supplemental Group III metal halide compound tosaid growth zone, wherein said second Group III nitride layer iscomprised of said Ga, said first supplemental Group III metal, saidsecond supplemental Group III metal, said third supplemental Group IIImetal and nitrogen, and wherein said second Group III nitride layer isformed by said reaction gas reacting with said gallium chloridecompound, said first supplemental Group III metal halide compound, saidsecond supplemental Group III metal halide compound and said thirdsupplemental Group III metal halide compound.
 26. The method of claim25, wherein said third supplemental Group III metal is selected from thegroup consisting of aluminum (Al), indium (In) and boron (B).
 27. Themethod of claim 1, further comprising the step of transporting at leastone acceptor impurity metal to said growth zone, wherein said firstGroup III nitride layer contains said at least one acceptor impuritymetal.
 28. The method of claim 27, wherein said first Group III nitridelayer has a p-type conductivity.
 29. The method of claim 27, whereinsaid at least one acceptor impurity metal is selected from the groupconsisting of magnesium (Mg), zinc (Zn) and magnesium-zinc (MgZn)alloys.
 30. The method of claim 1, further comprising the step oftransporting at least one acceptor impurity metal to said growth zone,wherein said second Group III nitride layer contains said at least oneacceptor impurity metal.
 31. The method of claim 30, wherein said secondGroup III nitride layer has a p-type conductivity.
 32. The method ofclaim 30, wherein said at least one acceptor impurity metal is selectedfrom the group consisting of magnesium (Mg), zinc (Zn) andmagnesium-zinc (MgZn) alloys.
 33. The method of claim 1, furthercomprising the step of transporting at least one donor impurity to saidgrowth zone, wherein said first Group III nitride layer contains said atleast one donor impurity.
 34. The method of claim 33, wherein said atleast one donor is selected from the group consisting of oxygen (O),germanium (Ge), silicon (Si) and tin (Sn).
 35. The method of claim 1,further comprising the step of transporting at least one donor impurityto said growth zone, wherein said second Group III nitride layercontains said at least one donor impurity.
 36. The method of claim 35,wherein said at least one donor is selected from the group consisting ofoxygen (O), germanium (Ge), silicon (Si) and tin (Sn).
 37. The method ofclaim 1, wherein said thickness of said second Group III nitride layeris less than 0.01 microns.
 38. The method of claim 1, wherein saidthickness of said second Group III nitride layer is less than 0.005microns.
 39. The method of claim 1, further comprising the steps of:locating a Group V material in a third source zone of said HVPE reactor;and transporting said Group V material to said growth zone, wherein saidfirst Group III nitride layer is comprised of said gallium, said Group Vmaterial and nitrogen.
 40. The method of claim 1, further comprising thesteps of: locating a Group V material in a third source zone of saidHVPE reactor; and transporting said Group V material to said growthzone, wherein said second Group III nitride layer is comprised of saidgallium, said Group V material and nitrogen.
 41. The method of claim 1,wherein said second exposed surface area is less than 4 squaremillimeters.
 42. The method of claim 1, wherein said second exposedsurface area is less than 2 square millimeters.
 43. The method of claim1, wherein said second exposed surface area is less than 1 squaremillimeter.
 44. The method of claim 1, wherein said second expitaxialgrowth rate is less than 0.05 microns per hour.
 45. The method of claim1, wherein said second expitaxial growth rate is less than 0.01 micronsper hour.
 46. The method of claim 1, wherein said second expitaxialgrowth rate is less than 0.005 microns per hour.
 47. The method of claim1, further comprising the step of growing an additional Group IIInitride layer, said additional Group III nitride layer interposedbetween said substrate and said first Group III nitride layer.